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| Preliminary TSM4886 30V N-Channel MOSFET SOP-8 Pin Definition: 1. Source 2. Source 3. Source 4. Gate 5, 6, 7, 8. Drain PRODUCT SUMMARY VDS (V) RDS(on)(m) 30 10 @ VGS = 10V 13.5 @ VGS = 4.5V ID (A) 13 11 Features Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Block Diagram Application DC-DC Conversion Battery Switch Ordering Information Part No. TSM4886CS RL Package SOP-8 Packing 2.5Kpcs / 13" Reel N-Channel MOSFET Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Continuous Source Current (Diode Conduction) Maximum Power Dissipation Operating Junction Temperature Operating Junction and Storage Temperature Range a,b o o Symbol VDS VGS ID IDM IS PD TJ TJ, TSTG Ta = 25 C Ta = 75 C Limit 30 20 13 50 2.6 2.95 1.9 +150 - 55 to +150 Unit V V A A A W o o C C Thermal Performance Parameter Junction to Case Thermal Resistance Junction to Ambient Thermal Resistance (PCB mounted) Notes: a. Pulse width limited by the Maximum junction temperature b. Surface Mounted on FR4 Board, t 10 sec. Symbol RJC RJA Limit 25 50 Unit o o C/W C/W 1/4 Version: Preliminary Preliminary TSM4886 30V N-Channel MOSFET Electrical Specifications (Ta = 25oC unless otherwise noted) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Body Leakage Zero Gate Voltage Drain Current On-State Drain Current a a Conditions VGS = 0V, ID = 250uA VDS = VGS, ID = 250A VGS = 20V, VDS = 0V VDS = 24V, VGS = 0V VDS 5V, VGS = 10V VGS = 10V, ID = 13A VGS = 4.5V, ID = 11A VDS = 15V, ID = 13A IS = 2.6A, VGS = 0V Symbol BVDSS VGS(TH) IGSS IDSS ID(ON) RDS(ON) gfs VSD Qg Qgs Qgd Ciss Coss Crss td(on) tr td(off) Min 30 1 --40 --------------- Typ -1.8 ---7.8 10.5 38 0.85 26 6 5 2134 343 134 17 3.5 40 6 Max -3 100 1.0 -10 13.5 -1.3 ----------- Unit V V nA A A m S V Drain-Source On-State Resistance Forward Transconductance Diode Forward Voltage Dynamic b a Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching c VDS = 15V, ID = 13A, VGS = 5V VDS = 15V, VGS = 0V, f = 1.0MHz nC pF Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time VDD = 15V, RL = 1.0, ID = 1A, VGEN = 10V, nS RG = 3 Turn-Off Fall Time tf Notes: a. pulse test: PW 300S, duty cycle 2% b. For DESIGN AID ONLY, not subject to production testing. b. Switching time is essentially independent of operating temperature. 2/4 Version: Preliminary Preliminary TSM4886 30V N-Channel MOSFET SOP-8 Mechanical Drawing DIM A B C D F G K M P R SOP-8 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX. 4.80 5.00 0.189 0.196 3.80 4.00 0.150 0.157 1.35 1.75 0.054 0.068 0.35 0.49 0.014 0.019 0.40 1.25 0.016 0.049 1.27BSC 0.05BSC 0.10 0.25 0.004 0.009 0 7 0 7 5.80 6.20 0.229 0.244 0.25 0.50 0.010 0.019 3/4 Version: Preliminary Preliminary TSM4886 30V N-Channel MOSFET Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 4/4 Version: Preliminary |
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